SILICON-2014

Federal state budgetary institution of science
A.P. Vinogradov Institute of Geochemistry SB RAS

X Conference and IX School for Young Researchers dedicated to critical issues of physics, materials, technology and diagnostics of silicon, nanometer structures and silicon-based devices

«SILICON-2014»

Irkutsk(Lake Baikal),
July 7 to 12 2014 г.

Primary information

The Conference «Silicon-2014» is part of series of scientific meetings dedicated to silicon research.
Its history dates back to 1999, when the first silicon-devoted conference was held at MISIS.
Since 2000 this conference has been coupled with conducting School for Young Researchers.
Through the indicated time span such meetings have turned to be the primary forum, where academic scientists, university scholars and industry representatives from Russia and CIS countries report and discuss hot points on production of metallurgical and multi-crystalline silicon, materials for growing voluminous crystals and thin films of silicon and related stuff, as well as physics, technology and diagnostics of silicon, nanometer structures and silicon-based devices.

For School participants and students a course of subject-associated lectures will be delivered, so that future researchers could be acquainted with the most essential and paramount issues somehow linked with the production of silicon and Si-based modern devices. The conference will welcome invited speakers, the leading scientists involved in silicon materials applications, as well as participants with oral and poster presentations. At the conferences held in Irkutsk it is traditional to include into topical list the issues on production and purification of metallurgical silicon, production of solar battery material, other aspects of alternative power engineering using transformation of direct solar radiation into electric power.

Registration and abstract submission are to be accomplished only via the conference website http://conf.nsc.ru/si2014/ru/registration" or by e-mail si2014@igc.irk.ru.

The official languages of Conference: Russian and English.

Conference organizer:

Institute of Geochemistry SB RAS, Irkutsk, Russia

Topics to discuss:

1. Techniques to produce and purify metallurgical silicon;

2. Production of solar silicon and problems of solar power engineering;

3. Processes of growth from melt;

4. Growth and material science of bulk single crystals of silicon and related materials, e.g. Ge and SiGe;

5. Manufacturing of silicon and Si-based structures for photo voltaics;

6. Growth and material science of thin (including epitaxial) films on silicon, silicon-on-insulator, strained structures and low/high-k dielectrics;

7. Physics of silicon low-dimensional structures for solid-state electronics including nano- and optoelectronics, spintronics and photonics;

8. Nanotechnologies of silicon electronics: ion implantation, lithography, the quantum dots and buried layers manufacturing technologies;

9. Diagnostics of silicon and silicon-based devices;

10. Novel devices comprising elements of micromechanics, optoelectronics, power electronics, light-emitting structures and photo detectors;

11. Methods and equipment for growth and of silicon and its study.

REGISTRATION FORM

Venue
The conference will be conducted from July 7 to 12 at the tourist camp located in a picturesque site close to Lake Baikal. Participants will be met at the airport and train station in Irkutsk and transferred to the venue.

Abstract submission is open from February 3, 2010 till March 31, 2014. Abstracts should be submitted electronically only. The design and format of abstracts will be available at the conference site http://conf.nsc.ru/si2014/.
The conference proceedings will be published in a special volume.

The registration fee 200 euros includes participation, abstract volume, 2 coffee breaks and 3 meals a day, welcome and farewell parties. The fee can be paid in cash at registration desk upon arrival.
The registration fee 200 euros includes participation, abstract volume, 2 coffee breaks and 3 meals a day, welcome and farewell parties. The fee can be paid in cash at registration desk upon arrival.The registration fee 200 euros includes participation, abstract volume, 2 coffee breaks and 3 meals a day, welcome and farewell parties. The fee can be paid in cash at registration desk upon arrival.

Organizing Committee

Professor Dr. Phys. Math. Sci. Nepomnyaschih Alexander Iosifovich – Chairman

Eliseev Igor Alexeevich – Scientific Secretary

Berdnikov Vladimir Stepanovich - Institute of Thermophysics of SB RAS

Vladimirov Valeriy Mikhailovich - KSC of SB RAS

Vyatkin Anatoliy Fedorovich - Institute of microelectronics technology and high purity materials RAS

Gribov Boris Georgievich - INSTITUTE HIGH PURITY MATERIALS

Dashevskiy Mikhail Yakovlevich - National University of Science and Technology "MISIS" (MISIS)

Dvurechenskiy Anatoliy Vasiljevich - Rzhanov Institute of Semiconductor Physics of SB RAS

Ezhlov Vadim Sergeevich - JSC “Giredmet” SRC RF

Kazanskiy Andrey Georgievich - Lomonosov Moscow State University

Kveder Vitaliy Vladimirovich - Institute of Solid State Physics RAS

Kobeleva Svetlana Petrovna National - University of Science and Technology "MISIS" (MISIS)

Krasiljnik Zakhariy Fishelevich - Institute for Physics of Microstructures RAS

Krasnikov Gennadiy Yakovlevich - "Mikron" group

Kuznetsov Fedor Andreevich Nikolaev - Institute of Inorganic Chemistry of SB RAS

Latyshev Alexandr Vasilievich - Rzhanov Institute of Semiconductor Physics of SB RAS

Nemchinova Nina Vladimirovna - National research Irkutsk state Technical University

Orlikovskiy Alexandr Alexandrovich - Institute of Physics and Technology of the RAS (FTIAN)

Parkhomenko Yuriy Nikolaevich - JSC “Giredmet” SRC RF

Pchelyakov Oleg Petrovich Rzhanov - Institute of Semiconductor Physics of SB RAS

Saranin Alexandr Alexandrovich - Institute of Automation and Control Processes FEB RAS

Sobolev Nikolay Alexeevich - Ioffe Physical-Technical Institute

Sorokin Lev Mikhailovich - Ioffe Physical-Technical Institute

Strebkov Dmitriy Semjonovich - All-Russian Scientific-Research Institute for Electrification of Agriculture

Yakimov Evgeniy Borisovich - Institute of Microelectronics Technology and High Purity Materials RAS

Important dates:

Zirkular(file pdf)
Zirkular 2(file pdf)

Address of the organizing Committee:

Federal state budgetary institution of science
A.P. Vinogradov Institute of Geochemistry SB RAS
1 a Favorsky str., Irkutsk, 664033, Russia

Тel.: +7 (3952) 429923
Fax: +7 (3952) 427050
E-mail: si2014@igc.irk.ru
Website: http://www.igc.irk.ru